Electronic Raman scattering in filling-controlled metals: Sr1-xLaxTiO3

T. Katsufuji*, Y. Tokura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Electronic Raman scattering has been investigated for metallic Sr1-xLaxTiO3 in which the 3d band filling (x) can be systematically changed from x=0 (a band insulator) to x=1 (a Mott-Hubbard insulator). The symmetry dependence of the scattering intensity can be accounted for in terms of the neutral carrier density fluctuation model. However, a systematic change of the spectral shape with the carrier density (x) is observed. All the spectra can be reproduced by a relaxational function with an ω-dependent scattering rate (Γ). The ω dependence of Γ gets stronger with x, which is in accord with the x-dependent enhancement of the effective mass, due to the electron correaltion effect.

Original languageEnglish
Pages (from-to)4372-4375
Number of pages4
JournalPhysical Review B
Issue number6
Publication statusPublished - 1994 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'Electronic Raman scattering in filling-controlled metals: Sr1-xLaxTiO3'. Together they form a unique fingerprint.

Cite this