TY - JOUR
T1 - Electronic state formation by surface atom removal on a MoS 2 surface
AU - Kodama, Nagisa
AU - Hasegawa, Tsuyoshi
AU - Tsuruoka, Tohru
AU - Joachim, Christian
AU - Aono, Masakazu
PY - 2012/6
Y1 - 2012/6
N2 - Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.
AB - Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.
UR - http://www.scopus.com/inward/record.url?scp=84863310358&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863310358&partnerID=8YFLogxK
U2 - 10.1143/JJAP.51.06FF07
DO - 10.1143/JJAP.51.06FF07
M3 - Article
AN - SCOPUS:84863310358
SN - 0021-4922
VL - 51
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 6 PART 2
M1 - 06FF07
ER -