Electronic state formation by surface atom removal on a MoS 2 surface

Nagisa Kodama*, Tsuyoshi Hasegawa, Tohru Tsuruoka, Christian Joachim, Masakazu Aono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Removal of a sulfur atom from the topmost layer of a MoS 2 surface forms electronic states in the band-gap of an inherently semiconducting material. Scanning tunneling spectroscopy measured at sulfur vacancies, which were made by sulfur atom removal using the high electrical field of a scanning tunneling microscope, shows stepwise increases in the current in a band-gap region, corresponding to the formation of electronic states. The periphery of sulfur vacancies also show linear current-voltage (I=V) characteristics, suggesting that electronic states in the periphery are modified due to the removal of sulfur atoms.

Original languageEnglish
Article number06FF07
JournalJapanese journal of applied physics
Issue number6 PART 2
Publication statusPublished - 2012 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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