Electronic states of monolayer hexagonal boron nitride formed on the metal surfaces

A. Nagashima*, N. Tejima, Y. Gamou, T. Kawai, C. Oshima

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)

Abstract

By using angle-resolved ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy and electron energy loss spectroscopy (EELS), we have investigated the electronic properties of monolayer films of hexagonal boron nitride (h-BN) formed on Ni(111), Pd(111) and Pt(111). Because of the weakness of the interfacial bonding, the electronic structure of monolayer BN is almost independent of the substrate and the energy bands and core-levels in the BN film are aligned to the vacuum level, not to the Fermi level. In accordance with these results, the EELS spectra observed for the BN-metal systems change from one substrate to the other depending on the work function.

Original languageEnglish
Pages (from-to)307-311
Number of pages5
JournalSurface Science
Volume357-358
DOIs
Publication statusPublished - 1996 Jun 20

Keywords

  • Boron nitride
  • Electron energy loss spectroscopy
  • Ultraviolet photoelectron spectroscopy
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

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