TY - JOUR
T1 - Electronic states of the heteroepitaxial double-layer system
T2 - Graphite/monolayer hexagonal boron nitride/Ni (111)
AU - Nagashima, A.
AU - Gamou, Y.
AU - Terai, M.
AU - Wakabayashi, M.
AU - Oshima, C.
PY - 1996/11/15
Y1 - 1996/11/15
N2 - By using angle-resolved ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, and work function measurement, we have explored the electronic states of the heteroepitaxial double-layer (HEDL) system composed of Ni(111), monolayer hexagonal boron nitride, and graphite overlayer. Present data clearly indicate that in the HEDL system, the spatial change of the electronic states at the interfaces is abrupt in atomic scale.
AB - By using angle-resolved ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, and work function measurement, we have explored the electronic states of the heteroepitaxial double-layer (HEDL) system composed of Ni(111), monolayer hexagonal boron nitride, and graphite overlayer. Present data clearly indicate that in the HEDL system, the spatial change of the electronic states at the interfaces is abrupt in atomic scale.
UR - http://www.scopus.com/inward/record.url?scp=0002671686&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0002671686&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0002671686
SN - 0163-1829
VL - 54
SP - 13491
EP - 13494
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 19
ER -