Abstract
The d-d optical absorption spectra, photoemission spectra and donor and acceptor ionization energies of 3d transition-metal impurities in II-VI semiconductors have been investigated using the cluster and Anderson impurity models with configuration interaction. It is shown that both systematic chemical trends and multiplet effects are essential to explain the variations of the donor and acceptor levels with transition-metal elements.
| Original language | English |
|---|---|
| Pages (from-to) | 417-418 |
| Number of pages | 2 |
| Journal | Japanese journal of applied physics |
| Volume | 32 |
| Issue number | S3 |
| DOIs | |
| Publication status | Published - 1993 Jan |
| Externally published | Yes |
Keywords
- 3d transition-metal impurity in semiconductor
- D-d optical absorption
- Donor and acceptor levels
- Electronic structure
- Photoemission
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)