Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy

J. Okabayashi*, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)


We have studied the electronic structure of Ga1-xMnxAs by angle-resolved photoemission spectroscopy. The effect of Mn doping in GaAs was revealed as the formation of new states near the Fermi level, which originate from the Mn aceptor state, and are split from the valence-band maximum of the host GaAs. These states would be responsible for the anomalous transport properties of Ga1-xMnxAs.

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-3
Publication statusPublished - 2001 May
Externally publishedYes


  • Density of states
  • Energy-band dispersion
  • GaMnAs
  • Photoemission spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'Electronic structure of Ga1-xMnxAs studied by angle-resolved photoemission spectroscopy'. Together they form a unique fingerprint.

Cite this