Electronic structure of in the vicinity of the superconductor-insulator transition

A. Ino, C. Kim, M. Nakamura, T. Yoshida, T. Mizokawa, Z. Shen, A. Fujimori, T. Kakeshita, H. Eisaki, S. Uchida

Research output: Contribution to journalArticlepeer-review

131 Citations (Scopus)


We report on the result of angle-resolved photoemission study of (Formula presented) (LSCO) from an optimally doped superconductor (Formula presented) to an antiferromagnetic insulator (Formula presented) Near the superconductor-insulator transition (Formula presented) spectral weight is transferred with hole doping between two coexisting components, suggesting a microscopic inhomogeneity of the doped-hole distribution. For the underdoped LSCO (Formula presented) the dispersive band crossing the Fermi level becomes invisible in the (Formula presented) direction unlike (Formula presented) These observations may be reconciled with the evolution of holes in the insulator into fluctuating stripes in the superconductor.

Original languageEnglish
Pages (from-to)4137-4141
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number6
Publication statusPublished - 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Electronic structure of in the vicinity of the superconductor-insulator transition'. Together they form a unique fingerprint.

Cite this