Electronic structure of InN observed by Shubnikov-de Haas measurements

T. Inushima; M. Higashiwaki; T. Matsui; T. Takenobu; M. Motokawa

doi:10.1002/pssc.200303461

Electronic structure of InN observed by Shubnikov-de Haas measurements

T. Inushima^*, M. Higashiwaki, T. Matsui, T. Takenobu, M. Motokawa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

We investigated the electronic structure of degenerated InN by Shubnikov-de Haas (SdH) measurements for the first time. The SdH oscillation depends on the angle between the crystal c-axis and the applied field and has two components; one originates from the spherical Fermi surface with effective mass of about 0.085 m0, the other from the layered structure spread in the a-b plane. In the case of Sidoped InN with the carrier density of 2.5×10 ¹⁸ cm ^-3, about half electron density exists on the a-b plane.

Original language	English
Title of host publication	Physica Status Solidi C: Conferences
Pages	2822-2825
Number of pages	4
Edition	7
DOIs	https://doi.org/10.1002/pssc.200303461
Publication status	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

Other

Other	5th International Conference on Nitride Semiconductors, ICNS 2003
Country/Territory	Japan
City	Nara
Period	03/5/25 → 03/5/30

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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10.1002/pssc.200303461

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@inproceedings{b7530348cd8b430ab5ceb4c687ec5b2b,

title = "Electronic structure of InN observed by Shubnikov-de Haas measurements",

abstract = "We investigated the electronic structure of degenerated InN by Shubnikov-de Haas (SdH) measurements for the first time. The SdH oscillation depends on the angle between the crystal c-axis and the applied field and has two components; one originates from the spherical Fermi surface with effective mass of about 0.085 m0, the other from the layered structure spread in the a-b plane. In the case of Sidoped InN with the carrier density of 2.5×10 18 cm -3, about half electron density exists on the a-b plane.",

author = "T. Inushima and M. Higashiwaki and T. Matsui and T. Takenobu and M. Motokawa",

year = "2003",

doi = "10.1002/pssc.200303461",

language = "English",

pages = "2822--2825",

booktitle = "Physica Status Solidi C: Conferences",

edition = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - GEN

T1 - Electronic structure of InN observed by Shubnikov-de Haas measurements

AU - Inushima, T.

AU - Higashiwaki, M.

AU - Matsui, T.

AU - Takenobu, T.

AU - Motokawa, M.

PY - 2003

Y1 - 2003

N2 - We investigated the electronic structure of degenerated InN by Shubnikov-de Haas (SdH) measurements for the first time. The SdH oscillation depends on the angle between the crystal c-axis and the applied field and has two components; one originates from the spherical Fermi surface with effective mass of about 0.085 m0, the other from the layered structure spread in the a-b plane. In the case of Sidoped InN with the carrier density of 2.5×10 18 cm -3, about half electron density exists on the a-b plane.

AB - We investigated the electronic structure of degenerated InN by Shubnikov-de Haas (SdH) measurements for the first time. The SdH oscillation depends on the angle between the crystal c-axis and the applied field and has two components; one originates from the spherical Fermi surface with effective mass of about 0.085 m0, the other from the layered structure spread in the a-b plane. In the case of Sidoped InN with the carrier density of 2.5×10 18 cm -3, about half electron density exists on the a-b plane.

UR - http://www.scopus.com/inward/record.url?scp=20644439839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20644439839&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303461

DO - 10.1002/pssc.200303461

M3 - Conference contribution

AN - SCOPUS:20644439839

SP - 2822

EP - 2825

BT - Physica Status Solidi C: Conferences

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Electronic structure of InN observed by Shubnikov-de Haas measurements

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