Electronic structure of LaO1-x Fx BiSe2 (x=0.18) revealed by photoelectron spectromicroscopy

N. L. Saini, D. Ootsuki, E. Paris, B. Joseph, A. Barinov, M. Tanaka, Y. Takano, T. Mizokawa

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15 Citations (Scopus)


We report an electronic structure study on LaO1-xFxBiSe2 (x=0.18) by means of photoelectron spectromicroscopy. The Fermi surfaces and band dispersions are basically consistent with the band-structure calculations on BiS2-based materials, indicating that the electron correlation effects may be irrelevant to describe physics of the new BiSe2 system. In LaO1-xFxBiSe2 (x=0.18), the area of the Fermi pockets is estimated to be 0.16±0.02 per Bi, consistent with the amount of F substitution. Although the spectromicroscopy technique avoids the effect of microscale inhomogeneity for angle-resolved photoemission spectroscopy (ARPES), the ARPES spectral features are rather broad in the momentum space, indicating the likely effect of local disorder in the BiSe2 layer.

Original languageEnglish
Article number214517
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number21
Publication statusPublished - 2014 Dec 19
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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