Electronic structure of Mott-Hubbard-type transition-metal oxides

A. Fujimori*, T. Yoshida, K. Okazaki, T. Tsujioka, K. Kobayashi, T. Mizokawa, M. Onoda, T. Katsufuji, Y. Taguchi, Y. Tokura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


Oxides of Ti and V belong to the Mott-Hubbard regime of the Zaanen-Sawatzky-Allen classification scheme of transition-metal compounds and have simple electronic structures which allow us to study the effect of electron correlation in a transparent way. In this article, we make an overview of our recent photoemission studies on Ti and V oxides, with special emphasis on metal-insulator transitions induced by the control of the width and the filling of the Ti and V 3d bands. Spectroscopic data yield spectral weight transfer between the coherent and incoherent parts of the d band, the spectral intensities at the Fermi level and the chemical potential shifts as functions of band filling. We show that such spectroscopic information well corresponds to the thermodynamic and transport properties and is necessary to understand electron correlation phenomena from a fundamental viewpoint.

Original languageEnglish
Pages (from-to)277-286
Number of pages10
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 2001 Jun
Externally publishedYes


  • Chemical potential shift
  • Hubbard bands
  • Mott transition
  • Spectral weight transfer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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