Electronic structure of silicon-oxygen high polymers

Kyozaburo Takeda*, Kenji Shiraishi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


The electronic structure of silicon-oxygen high polymers (siloxane and siloxene) have been calculated by the first-principle local-density-functional method. Oxygen's lone-pair (OLP) states play an important role in the electronic structure of these polymers, in accordance with oxygen's spatial position. In siloxane, where oxygen atoms position in the Si skeleton backbone, non-bonding (n) electrons in the OLP states cut Si's σ-electron delocalization, and widen the band gap. On the contrary, when oxygen atoms are located outside of the Si skeleton (siloxene), the characteristic σ-n mixing occuring at the band-edge states has a potential to reduce the band gap.

Original languageEnglish
Pages (from-to)301-305
Number of pages5
JournalSolid State Communications
Issue number4
Publication statusPublished - 1993 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'Electronic structure of silicon-oxygen high polymers'. Together they form a unique fingerprint.

Cite this