Electronic structures of heavily boron-doped superconducting diamond films

Takayoshi Yokoya; Hiroyuki Okazaki; Tetsuya Nakamura; Tomohiro Matsushita; Takayuki Muro; Eiji Ikenaga; Masaaki Kobata; Keisuke Kobayashi; Akihisa Takeuchi; Akihiro Awaji; Yoshihiko Takano; Masanori Nagao; Tomohiro Takenouchi; Hiroshi Kawarada; Tamio Oguchi

Electronic structures of heavily boron-doped superconducting diamond films

Takayoshi Yokoya^*, Hiroyuki Okazaki, Tetsuya Nakamura, Tomohiro Matsushita, Takayuki Muro, Eiji Ikenaga, Masaaki Kobata, Keisuke Kobayashi, Akihisa Takeuchi, Akihiro Awaji, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada, Tamio Oguchi

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.

Original language	English
Title of host publication	Diamond Electronics-Fundamentals to Applications
Pages	39-46
Number of pages	8
Publication status	Published - 2007
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Nov 30

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	956
ISSN (Print)	0272-9172

Other

Other	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06/11/27 → 06/11/30

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Yokoya, T., Okazaki, H., Nakamura, T., Matsushita, T., Muro, T., Ikenaga, E., Kobata, M., Kobayashi, K., Takeuchi, A., Awaji, A., Takano, Y., Nagao, M., Takenouchi, T., Kawarada, H., & Oguchi, T. (2007). Electronic structures of heavily boron-doped superconducting diamond films. In Diamond Electronics-Fundamentals to Applications (pp. 39-46). (Materials Research Society Symposium Proceedings; Vol. 956).

Yokoya, T, Okazaki, H, Nakamura, T, Matsushita, T, Muro, T, Ikenaga, E, Kobata, M, Kobayashi, K, Takeuchi, A, Awaji, A, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2007, Electronic structures of heavily boron-doped superconducting diamond films. in Diamond Electronics-Fundamentals to Applications. Materials Research Society Symposium Proceedings, vol. 956, pp. 39-46, 2006 MRS Fall Meeting, Boston, MA, United States, 06/11/27.

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abstract = "Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.",

author = "Takayoshi Yokoya and Hiroyuki Okazaki and Tetsuya Nakamura and Tomohiro Matsushita and Takayuki Muro and Eiji Ikenaga and Masaaki Kobata and Keisuke Kobayashi and Akihisa Takeuchi and Akihiro Awaji and Yoshihiko Takano and Masanori Nagao and Tomohiro Takenouchi and Hiroshi Kawarada and Tamio Oguchi",

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AU - Yokoya, Takayoshi

AU - Okazaki, Hiroyuki

AU - Nakamura, Tetsuya

AU - Matsushita, Tomohiro

AU - Muro, Takayuki

AU - Ikenaga, Eiji

AU - Kobata, Masaaki

AU - Kobayashi, Keisuke

AU - Takeuchi, Akihisa

AU - Awaji, Akihiro

AU - Takano, Yoshihiko

AU - Nagao, Masanori

AU - Takenouchi, Tomohiro

AU - Kawarada, Hiroshi

AU - Oguchi, Tamio

PY - 2007

Y1 - 2007

N2 - Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.

AB - Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.

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M3 - Conference contribution

AN - SCOPUS:40949146181

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T3 - Materials Research Society Symposium Proceedings

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BT - Diamond Electronics-Fundamentals to Applications

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 30 November 2006

ER -

Electronic structures of heavily boron-doped superconducting diamond films

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ASJC Scopus subject areas

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