Electronic structures of heavily boron-doped superconducting diamond films

Takayoshi Yokoya*, Hiroyuki Okazaki, Tetsuya Nakamura, Tomohiro Matsushita, Takayuki Muro, Eiji Ikenaga, Masaaki Kobata, Keisuke Kobayashi, Akihisa Takeuchi, Akihiro Awaji, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada, Tamio Oguchi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.

Original languageEnglish
Title of host publicationDiamond Electronics-Fundamentals to Applications
Number of pages8
Publication statusPublished - 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Nov 30

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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