Energetics in the growth mechanism of semiconductor heteroepitaxy

N. Miyagishima, K. Okajima, N. Oyama, K. Shiraishi, K. Takeda, T. Ohno, T. Ito

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We phenomenologically investigate the growth behavior in lattice-mismatched heteroepitaxy. We focus on the critical thickness of misfit dislocations (MDs) in Volmer-Weber (VW) and Stranski-Krastanov (SK) modes. Calculated results show that critical thickness in VW mode is much smaller than that in SK mode. This is because energy loss in MD formation in VW islands is smaller than that in SK islands due to the absence of wetting layers during VW growth.

Original languageEnglish
Pages (from-to)1599-1602
Number of pages4
JournalJournal of Crystal Growth
Issue number1 4 II
Publication statusPublished - 2002 Apr


  • A1. Defects
  • A1. Growth models
  • A1. Stresses
  • A3. Molecular beam epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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