Abstract
The analysis of energy of elastic strain induced by the residual stresses in bonded structure in the framework of Timoshenko's model has been done. The analysis revealed the energy is due to the forces aimed at splitting the structure. The energy as well as the splitting forces strongly depended on the thickness ratio of the bonded layers and the total thickness of the structure. The dependence included the point where splitting forces were equal zero (E 1h 1 2 = E 2h 2 2). The latter allows reducing the debonding problem, often appearing in the case of bonded structures of dissimilar materials, which becomes peculiarly important in micro and nanofabrication processes.
Translated title of the contribution | Energy distribution of residual stresses in bi-layer structure |
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Original language | Undefined/Unknown |
Pages (from-to) | 111-113 |
Number of pages | 3 |
Journal | Przeglad Elektrotechniczny |
Volume | 88 |
Issue number | 6 |
Publication status | Published - 2012 |
Keywords
- Bonding
- Crystal quartz
- Residual stress
- Silicon
- Surface processing
- Thin surface coatings
ASJC Scopus subject areas
- Electrical and Electronic Engineering