Energy relaxation time of hot carriers photoexcited in InGaN

T. Ushiyama, T. Toizumi, Y. Nakazato, A. Tackeuchi*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


The energy relaxation time of hot carriers photoexcited in bulk InGaN is measured. The time-resolved pump and probe transmission measurements with subpicosecond time resolution show that the hot-carrier relaxation time is 0.92 ps at 15 K. The hot-carrier relaxation time becomes significantly shorter at higher temperatures. At temperatures higher than 150 K, there are no meaningful differences between rise times. This strong temperature dependence indicates that electron-phonon scattering dominates the carrier relaxation process.

Original languageEnglish
Pages (from-to)143-145
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number1
Publication statusPublished - 2008
Event15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
Duration: 2007 Jul 232007 Jul 27

ASJC Scopus subject areas

  • Condensed Matter Physics


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