Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence

Makoto Fujimaki*, Yoshimichi Ohki, Hiroyuki Nishikawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


The energy states of oxygen-deficient type defects in the vacuum ultraviolet region are discussed based on the experimental results of vacuum ultraviolet absorption, temperature dependence of the photoluminescence (PL) intensities at 4.3 and 3.1 eV, and lifetimes of the PLs. It was found that the oxygen-deficient type glass has a large absorption tail above 6 eV in addition to an absorption band around 5 eV and that the 3.1 eV PL intensity scarcely depends on temperature when excited above 6 eV. It was also found that the lifetime of the 4.3 eV PL is 9 ns and that of the 3.1 eV PL is 113 μs irrespective of the excitation photon energy. The obtained results are explainable by assuming that electrons excited into the conduction band by photons above 6 eV contribute to the PLs.

Original languageEnglish
Pages (from-to)1042-1046
Number of pages5
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 1997 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence'. Together they form a unique fingerprint.

Cite this