Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Arup Neogi; Henry Everitt; Hadis Morkoç; Takamasa Kuroda; Atsushi Tackeuchi

doi:10.1109/TNANO.2003.808513

Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Arup Neogi^*, Henry Everitt, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

Original language	English
Pages (from-to)	10-14
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	2
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2003.808513
Publication status	Published - 2003 Mar

Keywords

GaN
Molecular-beam epitaxy
Quantum dots
Semiconductor nanostructures
Time-resolved photoluminescence

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2003.808513

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title = "Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy",

abstract = "Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.",

keywords = "GaN, Molecular-beam epitaxy, Quantum dots, Semiconductor nanostructures, Time-resolved photoluminescence",

author = "Arup Neogi and Henry Everitt and Hadis Morko{\c c} and Takamasa Kuroda and Atsushi Tackeuchi",

note = "Funding Information: Manuscript received April 26, 2002; revised August 4, 2002. The work of A. Neogi was supported by the National Research Council (NRC). The work of H. Morko{\c c} was supported by the Virginia Commonwealth University (VCU). This work was supported in part the National Science Foundation (NSF), the Office of Naval Research (ONR), the Air Force Office of Scientific Research (AFOSR), the Multidisciplinary Research Program of the University Research Initiative (MURI), Michigan, and in part by the Army Research Office (ARO).",

year = "2003",

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doi = "10.1109/TNANO.2003.808513",

language = "English",

volume = "2",

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journal = "IEEE Transactions on Nanotechnology",

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T1 - Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

AU - Neogi, Arup

AU - Everitt, Henry

AU - Morkoç, Hadis

AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

N1 - Funding Information: Manuscript received April 26, 2002; revised August 4, 2002. The work of A. Neogi was supported by the National Research Council (NRC). The work of H. Morkoç was supported by the Virginia Commonwealth University (VCU). This work was supported in part the National Science Foundation (NSF), the Office of Naval Research (ONR), the Air Force Office of Scientific Research (AFOSR), the Multidisciplinary Research Program of the University Research Initiative (MURI), Michigan, and in part by the Army Research Office (ARO).

PY - 2003/3

Y1 - 2003/3

N2 - Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

AB - Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

KW - GaN

KW - Molecular-beam epitaxy

KW - Quantum dots

KW - Semiconductor nanostructures

KW - Time-resolved photoluminescence

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JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

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Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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