Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

Arup Neogi*, Henry Everitt, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Self-assembled GaN quantum dots (QDs), grown on AlN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs. Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.

Original languageEnglish
Pages (from-to)10-14
Number of pages5
JournalIEEE Transactions on Nanotechnology
Issue number1
Publication statusPublished - 2003 Mar


  • GaN
  • Molecular-beam epitaxy
  • Quantum dots
  • Semiconductor nanostructures
  • Time-resolved photoluminescence

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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