Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.
|Number of pages||3|
|Journal||Applied Physics Express|
|Publication status||Published - 2008 Apr 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)