Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Arup Neogi; Chang Won Lee; Henry O. Everitt; Takamasa Kuroda; Atsushi Tackeuchi; Eli Yablonovitch

doi:10.1103/PhysRevB.66.153305

Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Arup Neogi^*, Chang Won Lee, Henry O. Everitt, Takamasa Kuroda, Atsushi Tackeuchi, Eli Yablonovitch

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

352 Citations (Scopus)

Abstract

Using time-resolved photoluminescence measurements, the recombination rate in an In_0.18Ga_0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.

Original language	English
Article number	153305
Pages (from-to)	1533051-1533054
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.66.153305
Publication status	Published - 2002 Oct 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.66.153305

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abstract = "Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.",

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AU - Neogi, Arup

AU - Lee, Chang Won

AU - Everitt, Henry O.

AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

AU - Yablonovitch, Eli

PY - 2002/10/15

Y1 - 2002/10/15

N2 - Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.

AB - Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.

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Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling

Abstract

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