Enhancement/depletion surface channel field effect transistors of diamond and their logic circuits

Akira Hokazono*, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Using the p-type surface-conductive layer of diamond film, enhancement mode and depletion mode metal-semiconductor field effect transistors were fabricated on the same surface by changing the metals of the gate electrode. The threshold voltages of p-type metal semiconductor field effect transistors (MESFETs) can be controlled from negative (enhancement mode) to positive (depletion mode) as the electronegativities of gate metals increase. By the realization of high transconductance and the fabrication of enhancement and depletion mode MESFETs, the E/D-type logic circuits such as inverter, NAND and NOR circuits were fabricated for the first time.

Original languageEnglish
Pages (from-to)7133-7139
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number12 A
Publication statusPublished - 1997 Dec


  • As-grown surface
  • Depletion mode MESFET
  • Diamond
  • E/D-type logic circuit
  • Electronegativity
  • Enhancement mode MESFET
  • Hydrogen termination
  • Microwave plasma-assisted CVD
  • Schottky barrier height
  • Threshold voltage

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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