Epitaxial growth in Cu/Si(001)2 × 1 at high temperatures

T. Ichinokawa*, T. Inoue, H. Izumi, Y. Sakai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


The growth mechanism of Cu/Si(001)2 × 1 has been studied by means of scanning RHEED (reflection high energy electron diffraction) microscopy and scanning Auger electron spectroscopy. We obtained the following experimental results: (1) At room temperature, an intermixing layer of Cu with the Si surface is formed and no defined interface structure is observed. (2) At high temperatures (T ∼ 500 °C), anisotropic growth of islands is observed on Si(001)2 × 1 and the long axis of the islands corresponds to the direction normal to the dimmer row. The distribution of the anisotropic islands is closely correlated with the domain structure of 2 × 1 and 1 × 2. (3) The islands are composed of Cu-silicide and the interface regions between the islands and the substrate are rich in Si. (4) The small reduction of the Si Auger signal with increasing Cu coverage (0-100 ML) upon deposition at 500 ° C is explained by three-dimensional nucleation of islands with a low density of on the Si clean surface 1 × 1 structure. Island formation occurs in a modified mode of Volmer-Weber growth. Lastly, the nucleation mechanism of the Cu-silicide islands is discussed.

Original languageEnglish
Pages (from-to)416-424
Number of pages9
JournalSurface Science
Issue number3
Publication statusPublished - 1991 Jan 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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