Epitaxial growth of Fe3Si/GaAs(0 0 1) hybrid structures for spintronic application

J. Herfort; H. P. Schönherr; A. Kawaharazuka; M. Ramsteiner; K. H. Ploog

doi:10.1016/j.jcrysgro.2004.12.124

Epitaxial growth of Fe₃Si/GaAs(0 0 1) hybrid structures for spintronic application

J. Herfort^*, H. P. Schönherr, A. Kawaharazuka, M. Ramsteiner, K. H. Ploog

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Fe3Si/GaAs(0 0 1) hybrid structures of high crystal and interfacial perfection are fabricated by molecular beam epitaxy at 200°C. The composition of the films can be tuned over a wide range of Si content. The Fe3Si/GaAs(0 0 1) films are robust against thermal annealing up to 425°C. Room-temperature spin injection is demonstrated from the ferromagnetic metal Fe3Si into the semiconductor GaAs by analyzing the circular polarization of the electroluminescence intensity emitted by an n-i-p light-emitting diode.

Original language	English
Pages (from-to)	666-670
Number of pages	5
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.124
Publication status	Published - 2005 May 1

Keywords

A1. Spin injection
A3. Molecular beam epitaxy
B2. Ferromagnet/semiconductor hybrid structures

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1016/j.jcrysgro.2004.12.124

Cite this

@article{47d4128451f64265a77143c5053ccd94,

title = "Epitaxial growth of Fe3Si/GaAs(0 0 1) hybrid structures for spintronic application",

abstract = "Fe3Si/GaAs(0 0 1) hybrid structures of high crystal and interfacial perfection are fabricated by molecular beam epitaxy at 200°C. The composition of the films can be tuned over a wide range of Si content. The Fe3Si/GaAs(0 0 1) films are robust against thermal annealing up to 425°C. Room-temperature spin injection is demonstrated from the ferromagnetic metal Fe3Si into the semiconductor GaAs by analyzing the circular polarization of the electroluminescence intensity emitted by an n-i-p light-emitting diode.",

keywords = "A1. Spin injection, A3. Molecular beam epitaxy, B2. Ferromagnet/semiconductor hybrid structures",

author = "J. Herfort and Sch{\"o}nherr, {H. P.} and A. Kawaharazuka and M. Ramsteiner and Ploog, {K. H.}",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.124",

language = "English",

volume = "278",

pages = "666--670",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Epitaxial growth of Fe3Si/GaAs(0 0 1) hybrid structures for spintronic application

AU - Herfort, J.

AU - Schönherr, H. P.

AU - Kawaharazuka, A.

AU - Ramsteiner, M.

AU - Ploog, K. H.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - Fe3Si/GaAs(0 0 1) hybrid structures of high crystal and interfacial perfection are fabricated by molecular beam epitaxy at 200°C. The composition of the films can be tuned over a wide range of Si content. The Fe3Si/GaAs(0 0 1) films are robust against thermal annealing up to 425°C. Room-temperature spin injection is demonstrated from the ferromagnetic metal Fe3Si into the semiconductor GaAs by analyzing the circular polarization of the electroluminescence intensity emitted by an n-i-p light-emitting diode.

AB - Fe3Si/GaAs(0 0 1) hybrid structures of high crystal and interfacial perfection are fabricated by molecular beam epitaxy at 200°C. The composition of the films can be tuned over a wide range of Si content. The Fe3Si/GaAs(0 0 1) films are robust against thermal annealing up to 425°C. Room-temperature spin injection is demonstrated from the ferromagnetic metal Fe3Si into the semiconductor GaAs by analyzing the circular polarization of the electroluminescence intensity emitted by an n-i-p light-emitting diode.

KW - A1. Spin injection

KW - A3. Molecular beam epitaxy

KW - B2. Ferromagnet/semiconductor hybrid structures

UR - http://www.scopus.com/inward/record.url?scp=18444396188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18444396188&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.124

DO - 10.1016/j.jcrysgro.2004.12.124

M3 - Article

AN - SCOPUS:18444396188

SN - 0022-0248

VL - 278

SP - 666

EP - 670

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -