ESD protection of RF circuits in standard CMOS process

K. Higashi; A. O. Adan; M. Fukumi; N. Tanba; T. Yoshimasu; M. Hayashi

ESD protection of RF circuits in standard CMOS process

K. Higashi^*, A. O. Adan, M. Fukumi, N. Tanba, T. Yoshimasu, M. Hayashi

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance C_ESD depends on the ratio of C_ESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.

Original language	English
Pages	285-288
Number of pages	4
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States Duration: 2002 Jun 2 → 2002 Jun 4

Conference

Conference	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Seatle, WA
Period	02/6/2 → 02/6/4

ASJC Scopus subject areas

Engineering(all)

Cite this

@conference{0c73375e5ea14f0b94ad7c3a321e451e,

title = "ESD protection of RF circuits in standard CMOS process",

abstract = "The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.",

author = "K. Higashi and Adan, {A. O.} and M. Fukumi and N. Tanba and T. Yoshimasu and M. Hayashi",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "285--288",

note = "2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 02-06-2002 Through 04-06-2002",

}

TY - CONF

T1 - ESD protection of RF circuits in standard CMOS process

AU - Higashi, K.

AU - Adan, A. O.

AU - Fukumi, M.

AU - Tanba, N.

AU - Yoshimasu, T.

AU - Hayashi, M.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.

AB - The electro-static discharge (ESD) protection of radio frequency (RF) circuits in standard complementary metal-oxide semiconductor (CMOS) process was discussed. Results showed that the degradation of the radio frequency (RF) characteristics by ESD protection device capacitance CESD depends on the ratio of CESD and input transistor gate capacitance. The parasitic capacitance of the ESD device is reduced to ∼150 fF by using SCR(silicon controlled rectifiers)-based protection device.

UR - http://www.scopus.com/inward/record.url?scp=0036313644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036313644&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036313644

SP - 285

EP - 288

T2 - 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 2 June 2002 through 4 June 2002

ER -

ESD protection of RF circuits in standard CMOS process

Abstract

Conference

ASJC Scopus subject areas

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