ESD protection of RF circuits in standard CMOS process

K. Higashi; A. O. Adan; M. Fukumi; N. Tanba; T. Yoshimasu; M. Hayashi

ESD protection of RF circuits in standard CMOS process

K. Higashi^*, A. O. Adan, M. Fukumi, N. Tanba, T. Yoshimasu, M. Hayashi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to ∼150fF. 3kV HBM and 750V CDM are achieved in a LNA working at 2.5GHz with NF<4dB, applicable for Bluetooth wireless transceiver.

Original language	English
Pages (from-to)	31-34
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
Publication status	Published - 2002 Jan 1
Externally published	Yes
Event	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: 2002 Jun 2 → 2002 Jun 7

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "ESD protection of RF circuits in standard CMOS process",

abstract = "The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to ∼150fF. 3kV HBM and 750V CDM are achieved in a LNA working at 2.5GHz with NF<4dB, applicable for Bluetooth wireless transceiver.",

author = "K. Higashi and Adan, {A. O.} and M. Fukumi and N. Tanba and T. Yoshimasu and M. Hayashi",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "1",

pages = "31--34",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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note = "2002 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 02-06-2002 Through 07-06-2002",

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T1 - ESD protection of RF circuits in standard CMOS process

AU - Higashi, K.

AU - Adan, A. O.

AU - Fukumi, M.

AU - Tanba, N.

AU - Yoshimasu, T.

AU - Hayashi, M.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to ∼150fF. 3kV HBM and 750V CDM are achieved in a LNA working at 2.5GHz with NF<4dB, applicable for Bluetooth wireless transceiver.

AB - The tradeoffs in the ESD protection device for RFCMOS circuits are described, and the characteristics of an SCR-based ESD structure are presented. The parasitic capacitance of the ESD structure is reduced to ∼150fF. 3kV HBM and 750V CDM are achieved in a LNA working at 2.5GHz with NF<4dB, applicable for Bluetooth wireless transceiver.

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M3 - Conference article

AN - SCOPUS:0036070418

SN - 0149-645X

VL - 1

SP - 31

EP - 34

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - 2002 IEEE MTT-S International Microwave Symposium Digest

Y2 - 2 June 2002 through 7 June 2002

ER -

ESD protection of RF circuits in standard CMOS process

Abstract

ASJC Scopus subject areas

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