Etching-enhanced surface stress relaxation during initial ozone oxidation

Tetsuya Narushima*, Masahiro Kitajima, Akiko N. Itakura, Akira Kurokawa, Shingo Ichimura, Kazushi Miki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Initial oxidation via ozone on the Si(1 0 0) surface is investigated by measuring surface stress and observing atomic structure via a scanning tunneling microscopy (STM). A similar investigation is also carried out for molecular oxygen and the results are compared. As a result, monotonic increase of the surface stress to the compressive stress side is obtained up to 0.33 N/m for ozone oxidation at room temperature, while molecular oxygen shows only tiny surface stress growth. From the STM observations, it is found that the difference between ozone and molecular oxygen oxidation is the existence of surface etching. As the origin of the surface stress, therefore, the reduction of the intrinsic tensile surface stress due to the reconstructed surface by the etching process is proposed.

Original languageEnglish
Pages (from-to)1384-1388
Number of pages5
JournalSurface Science
Issue number5
Publication statusPublished - 2007 Mar 1
Externally publishedYes


  • Ozone oxidation
  • Scanning tunneling microscopy
  • Silicon
  • Surface stress measurement

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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