Evaluation of anisotropic biaxial stress in Si1-xGex/Ge mesa-structure by oil-immersion raman spectroscopy

S. Yamamoto; K. Takeuchi; R. Yokogawa; M. Tomita; D. Kosemura; K. Usuda; A. Ogura

doi:10.1149/06604.0039ecst

Evaluation of anisotropic biaxial stress in Si_1-xGe_x/Ge mesa-structure by oil-immersion raman spectroscopy

S. Yamamoto, K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, A. Ogura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

Si_1-xGe_x is one of the prospective materials for the next-generation transistors due to its high carrier mobility, especially for high Ge concentration Si_1-xGe_x. Inducing strain in the Si_1-xGe_x leads to transistor performance improvement, however it is difficult to evaluate strain induced in the channel region because the strained Si_1-xGe_x channel may be scaled down to nanosize and relaxed complicatedly. We adopted oil-immersion Raman spectroscopy to evaluate the stress in the Si_1-xGe_x nanostructure. In this technique, the anisotropic biaxial stress state in the Si_1-xGe_x nanostructure can be evaluated. As a result, the nanostructure size dependence of the biaxial stress states in the Si_1-xGe_x mesa structure on the Ge substrates was obtained, which was confirmed for the Si_1-xGe_x with 76, 85, 92% Ge concentrations.

Original language	English
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
Editors	F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. DeGendt
Publisher	Electrochemical Society Inc.
Pages	39-45
Number of pages	7
Edition	4
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06604.0039ecst
Publication status	Published - 2015
Externally published	Yes
Event	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States Duration: 2015 May 24 → 2015 May 28

Publication series

Name	ECS Transactions
Number	4
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	15/5/24 → 15/5/28

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/06604.0039ecst

Cite this

Yamamoto, S., Takeuchi, K., Yokogawa, R., Tomita, M., Kosemura, D., Usuda, K., & Ogura, A. (2015). Evaluation of anisotropic biaxial stress in Si_1-xGe_x/Ge mesa-structure by oil-immersion raman spectroscopy. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. DeGendt (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 (4 ed., pp. 39-45). (ECS Transactions; Vol. 66, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/06604.0039ecst

Evaluation of anisotropic biaxial stress in Si_1-xGe_x/Ge mesa-structure by oil-immersion raman spectroscopy. / Yamamoto, S.; Takeuchi, K.; Yokogawa, R. et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. ed. / F. Roozeboom; V. Narayanan; K. Kakushima; P. J. Timans; E. P. Gusev; Z. Karim; S. DeGendt. 4. ed. Electrochemical Society Inc., 2015. p. 39-45 (ECS Transactions; Vol. 66, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, S, Takeuchi, K, Yokogawa, R, Tomita, M, Kosemura, D, Usuda, K & Ogura, A 2015, Evaluation of anisotropic biaxial stress in Si_1-xGe_x/Ge mesa-structure by oil-immersion raman spectroscopy. in F Roozeboom, V Narayanan, K Kakushima, PJ Timans, EP Gusev, Z Karim & S DeGendt (eds), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 edn, ECS Transactions, no. 4, vol. 66, Electrochemical Society Inc., pp. 39-45, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting, Chicago, United States, 15/5/24. https://doi.org/10.1149/06604.0039ecst

Yamamoto S, Takeuchi K, Yokogawa R, Tomita M, Kosemura D, Usuda K et al. Evaluation of anisotropic biaxial stress in Si_1-xGe_x/Ge mesa-structure by oil-immersion raman spectroscopy. In Roozeboom F, Narayanan V, Kakushima K, Timans PJ, Gusev EP, Karim Z, DeGendt S, editors, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 ed. Electrochemical Society Inc. 2015. p. 39-45. (ECS Transactions; 4). doi: 10.1149/06604.0039ecst

Yamamoto, S. ; Takeuchi, K. ; Yokogawa, R. et al. / Evaluation of anisotropic biaxial stress in Si_1-xGe_x/Ge mesa-structure by oil-immersion raman spectroscopy. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. editor / F. Roozeboom ; V. Narayanan ; K. Kakushima ; P. J. Timans ; E. P. Gusev ; Z. Karim ; S. DeGendt. 4. ed. Electrochemical Society Inc., 2015. pp. 39-45 (ECS Transactions; 4).

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