Evaluation of device parameters for membrane lasers on si fabricated with active-layer bonding followed by epitaxial growth

We have developed membrane distributed Bragg reflector (DBR) lasers on thermally oxidized Si substrate (SiO2/Si substrate) to evaluate the parameters of the on-Si lasers we have been developing. The lasers have InGaAsP-based multi-quantum wells (MQWs) grown on InP substrate. We used direct bonding to transfer this active epitaxial layer to SiO2/Si substrate, followed by epitaxial growth of InP to fabricate a buried-heterostructure (BH) on Si. The lateral p-i-n structure was formed by thermal diffusion of Zn and ion implantation of Si. For the purpose of evaluating laser parameters such as internal quantum efficiency and internal loss, we fabricated long-cavity lasers that have 200-to 600-?m-long active regions. The fabricated DBR lasers exhibit threshold currents of 1.7, 2.1, 2.8, and 3.7mA for active-region lengths of 200, 300, 400, and 600 ?m, respectively. The differential quantum efficiency also depends on activeregion length. In addition, the laser characteristics depend on the distance between active region and p-doped region. We evaluated the internal loss to be 10.2 cm-1 and internal quantum efficiency to be 32.4% with appropriate doping profile.