Evaluation of KEK n-in-p planar pixel sensor structures for very high radiation environments with testbeam

K. Motohashi*, T. Kubota, K. Nakamura, R. Hori, C. Gallrapp, Y. Unno, O. Jinnouchi, S. Altenheiner, Y. Arai, M. Hagihara, M. Backhaus, M. Bomben, D. Forshaw, M. George, K. Hanagaki, K. Hara, M. Hirose, Y. Ikegami, N. Ishijima, J. JentzschK. Kawagoe, N. Kimura, T. Kono, A. MacChiolo, R. Nishimura, S. Oda, H. Otono, I. Rubinskiy, A. Rummler, R. Takashima, Y. Takubo, J. J. Teoh, S. Terada, K. Todome, J. Tojo, J. Usui, P. Weigell, J. Weingarten, D. Yamaguchi, K. Yorita

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Various structures for n-in-p planar pixel sensors have been developed at KEK in order to cope with the huge particle fluence in the upcoming LHC upgrades. Performances of the sensors with different structures have been evaluated with testbeam. The n-in-p devices were connected by bump-bonding to the ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 1×1016 1 MeV neq/cm2. Results of measurements with 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) in September 2012 are presented.

Original languageEnglish
Pages (from-to)125-129
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 2014 Nov 21


  • N-in-p
  • Pixel detector
  • Radiation hardness

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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