TY - GEN
T1 - Evaluation of lasing temperature characteristics of 1550nm QD-based-LDs by IID-QDI technique with ar and b ions and high temperature stability
AU - Matsumoto, A.
AU - Isawa, S.
AU - Kaneko, R.
AU - Akahane, K.
AU - Umezawa, T.
AU - Matsushima, Y.
AU - Utaka, K.
N1 - Funding Information:
This work was conducted as part of a research project supported by the Japanese Government funding for “R&D to Expand Radio Frequency Resources,” by the Ministry of Internal Affairs and Communications, and partly supported by JST CREST (JPMJCR17N2), and JSPS KAKENHI (JP19K15056), Japan.
Publisher Copyright:
© 2020 The Author(s).
PY - 2020
Y1 - 2020
N2 - We evaluated temperature characteristics of QD-based-LDs by ion-implantation-induced-disordering quantum-dot intermixing technique with Ar and B ions, and demonstrated high temperature stability with a characteristic temperature of 284 K and a wavelength shift of 0.15 nm/°C.
AB - We evaluated temperature characteristics of QD-based-LDs by ion-implantation-induced-disordering quantum-dot intermixing technique with Ar and B ions, and demonstrated high temperature stability with a characteristic temperature of 284 K and a wavelength shift of 0.15 nm/°C.
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U2 - 10.1364/CLEO_AT.2020.JTh2D.6
DO - 10.1364/CLEO_AT.2020.JTh2D.6
M3 - Conference contribution
AN - SCOPUS:85095111476
SN - 9781943580767
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - Optica Publishing Group (formerly OSA)
T2 - CLEO: Applications and Technology, CLEO_AT 2020
Y2 - 10 May 2020 through 15 May 2020
ER -