TY - JOUR
T1 - Evaluation of silica glasses implanted by high-energy ions using a UV-excited microspectroscopy
AU - Yamaguchi, T.
AU - Watanabe, E.
AU - Souno, T.
AU - Nishikawa, H.
AU - Hattori, M.
AU - Ohki, Y.
AU - Kamiya, T.
AU - Arakawa, K.
N1 - Funding Information:
We acknowledge Dr. Fujimaki for providing the ion-implanted samples. This work is partly supported by Grants-in-Aid from Ministry of Education, Culture, Sports, Science and Technology, and by Iketani Foundation.
PY - 2002/5
Y1 - 2002/5
N2 - In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.
AB - In this study, defects induced by ion implantation were investigated by a photoluminescence (PL) microspectroscopy. When H+ or He2+ with high energy (∼MeV) were implanted into silica, two PL bands at 290 and 650 nm were observed under 244 nm excitation. The PL bands at 290 and 650 nm were ascribed to oxygen deficient centers and nonbridging oxygen hole centers, respectively. The PL depth profile analysis shows that these PL centers are distributed throughout the tracks of ions, while they are quenched in the proximity of their projected ranges. Based on the observation on the PL profiles, the formation of the PL centers was ascribed to the energy deposition by electronic stopping power. The role of nuclear stopping power on the defect formation is also discussed.
KW - Ion implantation
KW - Microspectroscopy
KW - Photoluminescence
KW - Silica glass
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U2 - 10.1016/S0168-583X(02)00540-2
DO - 10.1016/S0168-583X(02)00540-2
M3 - Article
AN - SCOPUS:0036574332
SN - 0168-583X
VL - 191
SP - 371
EP - 374
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-4
ER -