Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source

M. Takai; Y. Arita; S. Abo; T. Iwamatsu; S. Maegawa; H. Sayama; Y. Yamaguchi; M. Inuishi; T. Nishimura

doi:10.1109/ESSDERC.2001.195199

Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source

M. Takai^*, Y. Arita, S. Abo, T. Iwamatsu, S. Maegawa, H. Sayama, Y. Yamaguchi, M. Inuishi, T. Nishimura

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Soft errors in DRAMs and SRAMs have been evaluated using nuclear microprobes and neutron sources. Direct observation of soft errors in a DRAM such as soft error mapping indicates both cell-mode and bit- line-mode soft errors at local positions. Well engineering parameters, such as retrograde wells by high energy ion implantation in DRAMs and SRAMs, are directly evaluated by ion beam induced current (IBIC) using nuclear microprobes. Neutron induced soft errors caused by boron in BPSG (borophosphocilicate) layers have been clarified. Floating body effect in partially depleted SOI(silicon-on-insulator) MOSFETs and the effectiveness of body-tie structures in SOI MOSFETs have been directly observed using nuclear microprobe irradiation.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Heiner Ryssel, Gerhard Wachutka, Herbert Grunbacher
Publisher	IEEE Computer Society
Pages	17-24
Number of pages	8
ISBN (Electronic)	2914601018
DOIs	https://doi.org/10.1109/ESSDERC.2001.195199
Publication status	Published - 2001
Externally published	Yes
Event	31st European Solid-State Device Research Conference, ESSDERC 2001 - Nuremberg, Germany Duration: 2001 Sept 11 → 2001 Sept 13

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	31st European Solid-State Device Research Conference, ESSDERC 2001
Country/Territory	Germany
City	Nuremberg
Period	01/9/11 → 01/9/13

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/ESSDERC.2001.195199

Cite this

Takai, M., Arita, Y., Abo, S., Iwamatsu, T., Maegawa, S., Sayama, H., Yamaguchi, Y., Inuishi, M., & Nishimura, T. (2001). Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. In H. Ryssel, G. Wachutka, & H. Grunbacher (Eds.), European Solid-State Device Research Conference (pp. 17-24). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2001.195199

Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. / Takai, M.; Arita, Y.; Abo, S. et al.
European Solid-State Device Research Conference. ed. / Heiner Ryssel; Gerhard Wachutka; Herbert Grunbacher. IEEE Computer Society, 2001. p. 17-24 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takai, M, Arita, Y, Abo, S, Iwamatsu, T, Maegawa, S, Sayama, H, Yamaguchi, Y, Inuishi, M & Nishimura, T 2001, Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. in H Ryssel, G Wachutka & H Grunbacher (eds), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, pp. 17-24, 31st European Solid-State Device Research Conference, ESSDERC 2001, Nuremberg, Germany, 01/9/11. https://doi.org/10.1109/ESSDERC.2001.195199

Takai M, Arita Y, Abo S, Iwamatsu T, Maegawa S, Sayama H et al. Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. In Ryssel H, Wachutka G, Grunbacher H, editors, European Solid-State Device Research Conference. IEEE Computer Society. 2001. p. 17-24. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2001.195199

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Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source

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