Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films

K. Yoshioka; R. Yokogawa; M. Koharada; H. Takeuchi; G. Ogasawara; I. Hirosawa; T. Watanabe; A. Ogura

doi:10.1149/09805.0473ecst

Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films

K. Yoshioka^*, R. Yokogawa, M. Koharada, H. Takeuchi, G. Ogasawara, I. Hirosawa, T. Watanabe, A. Ogura

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We measured the influence of the germanium (Ge) nearest neighbor atom on the lattice vibration of silicon germanium (SiGe) thin films on silicon substrate, which is expected as a material for next-generation electronic and thermoelectric devices, by x-ray absorption fine structure measurement. The amount of changes in the Debye-Waller factor (Δσ²) of each sample were estimated from the obtained extended x-ray absorption fine structure spectra, and it was experimentally clarified that the lattice vibration of the SiGe films were different from that of Ge. On the other hand, it is considered that the lattice vibration of the SiGe films were suppressed by the compressive strain, since Δσ² have hardly changed with the Ge concentration. The Einstein temperature estimated from Δσ² decreased with increasing Ge concentration, suggesting that the thermal conductivity of SiGe film can be controlled by Ge concentration.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
Editors	Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
Publisher	IOP Publishing Ltd.
Pages	473-479
Number of pages	7
Edition	5
ISBN (Electronic)	9781607689003
DOIs	https://doi.org/10.1149/09805.0473ecst
Publication status	Published - 2020
Externally published	Yes
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: 2020 Oct 4 → 2020 Oct 9

Publication series

Name	ECS Transactions
Number	5
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	20/10/4 → 20/10/9

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/09805.0473ecst

Cite this

Yoshioka, K., Yokogawa, R., Koharada, M., Takeuchi, H., Ogasawara, G., Hirosawa, I., Watanabe, T., & Ogura, A. (2020). Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films. In Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, & A. Mai (Eds.), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9 (5 ed., pp. 473-479). Article 473 (ECS Transactions; Vol. 98, No. 5). IOP Publishing Ltd.. https://doi.org/10.1149/09805.0473ecst

Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films. / Yoshioka, K.; Yokogawa, R.; Koharada, M. et al.
PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. ed. / Q. Liu; J. M. Hartmann; J. R. Holt; X. Gong; V. Jain; G. Niu; G. Masini; A. Ogura; S. Miyazaki; M. Ostling; W. Bi; A. Schulze; A. Mai. 5. ed. IOP Publishing Ltd., 2020. p. 473-479 473 (ECS Transactions; Vol. 98, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoshioka, K, Yokogawa, R, Koharada, M, Takeuchi, H, Ogasawara, G, Hirosawa, I, Watanabe, T & Ogura, A 2020, Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films. in Q Liu, JM Hartmann, JR Holt, X Gong, V Jain, G Niu, G Masini, A Ogura, S Miyazaki, M Ostling, W Bi, A Schulze & A Mai (eds), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. 5 edn, 473, ECS Transactions, no. 5, vol. 98, IOP Publishing Ltd., pp. 473-479, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 20/10/4. https://doi.org/10.1149/09805.0473ecst

Yoshioka K, Yokogawa R, Koharada M, Takeuchi H, Ogasawara G, Hirosawa I et al. Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films. In Liu Q, Hartmann JM, Holt JR, Gong X, Jain V, Niu G, Masini G, Ogura A, Miyazaki S, Ostling M, Bi W, Schulze A, Mai A, editors, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. 5 ed. IOP Publishing Ltd. 2020. p. 473-479. 473. (ECS Transactions; 5). doi: 10.1149/09805.0473ecst

Yoshioka, K. ; Yokogawa, R. ; Koharada, M. et al. / Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films. PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. editor / Q. Liu ; J. M. Hartmann ; J. R. Holt ; X. Gong ; V. Jain ; G. Niu ; G. Masini ; A. Ogura ; S. Miyazaki ; M. Ostling ; W. Bi ; A. Schulze ; A. Mai. 5. ed. IOP Publishing Ltd., 2020. pp. 473-479 (ECS Transactions; 5).

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title = "Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films",

abstract = "We measured the influence of the germanium (Ge) nearest neighbor atom on the lattice vibration of silicon germanium (SiGe) thin films on silicon substrate, which is expected as a material for next-generation electronic and thermoelectric devices, by x-ray absorption fine structure measurement. The amount of changes in the Debye-Waller factor (Δσ2) of each sample were estimated from the obtained extended x-ray absorption fine structure spectra, and it was experimentally clarified that the lattice vibration of the SiGe films were different from that of Ge. On the other hand, it is considered that the lattice vibration of the SiGe films were suppressed by the compressive strain, since Δσ2 have hardly changed with the Ge concentration. The Einstein temperature estimated from Δσ2 decreased with increasing Ge concentration, suggesting that the thermal conductivity of SiGe film can be controlled by Ge concentration.",

author = "K. Yoshioka and R. Yokogawa and M. Koharada and H. Takeuchi and G. Ogasawara and I. Hirosawa and T. Watanabe and A. Ogura",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

year = "2020",

doi = "10.1149/09805.0473ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd.",

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pages = "473--479",

editor = "Q. Liu and Hartmann, {J. M.} and Holt, {J. R.} and X. Gong and V. Jain and G. Niu and G. Masini and A. Ogura and S. Miyazaki and M. Ostling and W. Bi and A. Schulze and A. Mai",

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AU - Yoshioka, K.

AU - Yokogawa, R.

AU - Koharada, M.

AU - Takeuchi, H.

AU - Ogasawara, G.

AU - Hirosawa, I.

AU - Watanabe, T.

AU - Ogura, A.

N1 - Publisher Copyright: © The Electrochemical Society

PY - 2020

Y1 - 2020

N2 - We measured the influence of the germanium (Ge) nearest neighbor atom on the lattice vibration of silicon germanium (SiGe) thin films on silicon substrate, which is expected as a material for next-generation electronic and thermoelectric devices, by x-ray absorption fine structure measurement. The amount of changes in the Debye-Waller factor (Δσ2) of each sample were estimated from the obtained extended x-ray absorption fine structure spectra, and it was experimentally clarified that the lattice vibration of the SiGe films were different from that of Ge. On the other hand, it is considered that the lattice vibration of the SiGe films were suppressed by the compressive strain, since Δσ2 have hardly changed with the Ge concentration. The Einstein temperature estimated from Δσ2 decreased with increasing Ge concentration, suggesting that the thermal conductivity of SiGe film can be controlled by Ge concentration.

AB - We measured the influence of the germanium (Ge) nearest neighbor atom on the lattice vibration of silicon germanium (SiGe) thin films on silicon substrate, which is expected as a material for next-generation electronic and thermoelectric devices, by x-ray absorption fine structure measurement. The amount of changes in the Debye-Waller factor (Δσ2) of each sample were estimated from the obtained extended x-ray absorption fine structure spectra, and it was experimentally clarified that the lattice vibration of the SiGe films were different from that of Ge. On the other hand, it is considered that the lattice vibration of the SiGe films were suppressed by the compressive strain, since Δσ2 have hardly changed with the Ge concentration. The Einstein temperature estimated from Δσ2 decreased with increasing Ge concentration, suggesting that the thermal conductivity of SiGe film can be controlled by Ge concentration.

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Evaluation of temperature and germanium concentration dependence of EXAFS oscillations in Si-rich silicon germanium thin films

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