Evaluation of test structures for the novel n+-in-p pixel and strip sensors for very high radiation environments

Y. Unno*, S. Mitsui, R. Hori, Y. Ikegami, S. Terada, S. Kamada, K. Yamamura, K. Hanagaki, K. Hara, O. Jinnouchi, N. Kimura, K. Nagai, I. Nakano, S. Oda, R. Takashima, Y. Takubo, J. Tojo, K. Yorita

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Radiation-tolerant n+-in-p silicon sensors were developed for use in very high radiation environments. Novel n+-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n+ implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon-silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.

Original languageEnglish
Pages (from-to)183-188
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 2013


  • Pixel
  • Radiation damage
  • Silicon sensor
  • Strip
  • n-in-p
  • p-type

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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