TY - JOUR
T1 - Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy
AU - Yokogawa, Ryo
AU - Tomita, Motohiro
AU - Watanabe, Takanobu
AU - Ogura, Atsushi
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - Thermal conductivity characteristics of Si nanowires (SiNWs) treated with thermal oxidation before and after a subsequent Ar+ ion irradiation process were evaluated by UV Raman spectroscopy, in order to investigate the impact of interfacial oxide-induced lattice disorder. Laser-power-dependent Raman spectroscopy showed that the rise in temperature caused by laser heating of SiNWs is suppressed by the Ar+ ion irradiation process. It is considered that this suppression of an increase in temperature is caused by the Ar+ ion irradiation breaking bonds at the SiO2/SiNW interface. These results indicate that not only roughness and defects but also bonding characteristics at SiO2/SiNW interfaces should be carefully considered to achieve a low value of thermal conductivity for next-generation SiNW thermoelectric devices. To realize phonon scattering in SiNWs efficiently, optimization of thermal oxidation is necessary.
AB - Thermal conductivity characteristics of Si nanowires (SiNWs) treated with thermal oxidation before and after a subsequent Ar+ ion irradiation process were evaluated by UV Raman spectroscopy, in order to investigate the impact of interfacial oxide-induced lattice disorder. Laser-power-dependent Raman spectroscopy showed that the rise in temperature caused by laser heating of SiNWs is suppressed by the Ar+ ion irradiation process. It is considered that this suppression of an increase in temperature is caused by the Ar+ ion irradiation breaking bonds at the SiO2/SiNW interface. These results indicate that not only roughness and defects but also bonding characteristics at SiO2/SiNW interfaces should be carefully considered to achieve a low value of thermal conductivity for next-generation SiNW thermoelectric devices. To realize phonon scattering in SiNWs efficiently, optimization of thermal oxidation is necessary.
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U2 - 10.7567/1347-4065/ab0889
DO - 10.7567/1347-4065/ab0889
M3 - Article
AN - SCOPUS:85069037043
SN - 0021-4922
VL - 58
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - SD
M1 - SDDF04
ER -