Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼

Akihiro Oshima; Toru Hinata; Hirotaka Nakamura; Toshitaka Oka; Nagayasu Oshima; Brian E. O'Rourke; Ryoichi Suzuki; Masakazu Washio; Seiichi Tagawa

doi:10.1117/12.2046659

Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼

Akihiro Oshima, Toru Hinata, Hirotaka Nakamura, Toshitaka Oka, Nagayasu Oshima, Brian E. O'Rourke, Ryoichi Suzuki, Masakazu Washio, Seiichi Tagawa

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.

Original language	English
Title of host publication	Advances in Patterning Materials and Processes XXXI
Publisher	SPIE
ISBN (Print)	9780819499745
DOIs	https://doi.org/10.1117/12.2046659
Publication status	Published - 2014
Event	Advances in Patterning Materials and Processes XXXI - San Jose, CA, United States Duration: 2014 Feb 24 → 2014 Feb 27

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9051
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Advances in Patterning Materials and Processes XXXI
Country/Territory	United States
City	San Jose, CA
Period	14/2/24 → 14/2/27

Keywords

Chemically and non-chemically amplified resists
EBL
EUVL
Free-volume
LER
O-Ps
PPMA
Resist sensitivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2046659

Cite this

Oshima, A., Hinata, T., Nakamura, H., Oka, T., Oshima, N., O'Rourke, B. E., Suzuki, R., Washio, M., & Tagawa, S. (2014). Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. In Advances in Patterning Materials and Processes XXXI Article 905107 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9051). SPIE. https://doi.org/10.1117/12.2046659

Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. / Oshima, Akihiro; Hinata, Toru; Nakamura, Hirotaka et al.
Advances in Patterning Materials and Processes XXXI. SPIE, 2014. 905107 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9051).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Oshima, A, Hinata, T, Nakamura, H, Oka, T, Oshima, N, O'Rourke, BE, Suzuki, R, Washio, M & Tagawa, S 2014, Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. in Advances in Patterning Materials and Processes XXXI., 905107, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9051, SPIE, Advances in Patterning Materials and Processes XXXI, San Jose, CA, United States, 14/2/24. https://doi.org/10.1117/12.2046659

Oshima A, Hinata T, Nakamura H, Oka T, Oshima N, O'Rourke BE et al. Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼. In Advances in Patterning Materials and Processes XXXI. SPIE. 2014. 905107. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2046659

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abstract = "EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.",

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author = "Akihiro Oshima and Toru Hinata and Hirotaka Nakamura and Toshitaka Oka and Nagayasu Oshima and O'Rourke, {Brian E.} and Ryoichi Suzuki and Masakazu Washio and Seiichi Tagawa",

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AU - Oshima, Akihiro

AU - Hinata, Toru

AU - Nakamura, Hirotaka

AU - Oka, Toshitaka

AU - Oshima, Nagayasu

AU - O'Rourke, Brian E.

AU - Suzuki, Ryoichi

AU - Washio, Masakazu

AU - Tagawa, Seiichi

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N2 - EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.

AB - EUV, X-ray and EB mainly induce ionization in resist materials and its energy deposition process is different from ArF exposure. Linear energy transfer (LET) effect for resist sensitivity is very important issue from the viewpoint of radiation induced chemical reactions for high-volume nanofabrication. Therefore the knowledgebase of radiation chemistry is required for understanding the resist performances for EUV lithography. In order to acquire the knowledge of resist materials for EUV / EB lithography from a viewpoint of the free-volume, the positron annihilation lifetime spectroscopy was carried out using positron probe microanalyzer (PPMA) installed at AIST. The size of free-volume can be evaluated from the lifetime of ortho-Positronium (o-Ps). The lifetime and intensity of o-Ps in EB-exposed positive-tone non-chemically amplified (non-CA, ZEP) and CA (UV-III) EUV / EB resists were observed. Moreover, to evaluate the relationship between line edge roughness (LER) and free-volume, EB lithography was carried out, and then sensitivities (E0 and Esize) and LER were measured. For both non-CA and CA resist materials, the changes of free-volume due to evaporation of outgas, polarity change or chain scission would hardly influence on their LER and resolution.

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ER -

Evaluation of vacancies in positive-tone non-chemically and chemically amplified euv / eb resists ∼ relationship between free-volume and LER ∼

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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