Excited-state absorption measurement in Ge-doped SiO2 glass

Makoto Fujimaki*, Kwang Soo Seol, Yoshimichi Ohki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Optical absorption change in the microsecond order in oxygen-deficient Ge-doped SiO2 glass was measured as a function of time just after photon irradiation from a KrF excimer laser. The absorption above 3 eV was found to decay with a similar time constant as that of the luminescence at 3.1 eV. From this, it is confirmed that the observed absorption change is due to the excitation of electrons from the lowest excited triplet state to an upper state. By taking account of the energy range of the absorption, there is a high possibility that the upper state is the conduction band.

Original languageEnglish
Pages (from-to)2913-2915
Number of pages3
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 1997 Mar 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Excited-state absorption measurement in Ge-doped SiO2 glass'. Together they form a unique fingerprint.

Cite this