Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

Takenori Ushimi; Hiromi Nakata; Toshihiro Ishizuka; Kazutoshi Sasayama; Shulong Lu; Jianrong Dong; Atsushi Tackeuchi

doi:10.1063/1.4730386

Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

Takenori Ushimi^*, Hiromi Nakata, Toshihiro Ishizuka, Kazutoshi Sasayama, Shulong Lu, Jianrong Dong, Atsushi Tackeuchi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.

Original language	English
Article number	252414
Journal	Applied Physics Letters
Volume	100
Issue number	25
DOIs	https://doi.org/10.1063/1.4730386
Publication status	Published - 2012 Jun 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates",

abstract = "We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.",

author = "Takenori Ushimi and Hiromi Nakata and Toshihiro Ishizuka and Kazutoshi Sasayama and Shulong Lu and Jianrong Dong and Atsushi Tackeuchi",

note = "Funding Information: The authors would like to thank Naohiro Asaka and Michiya Hashimoto of Waseda University for their experimental help. This work was supported in part by a Grant-in-Aid for Scientific Research (No. 22360032) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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doi = "10.1063/1.4730386",

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T1 - Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

AU - Ushimi, Takenori

AU - Nakata, Hiromi

AU - Ishizuka, Toshihiro

AU - Sasayama, Kazutoshi

AU - Lu, Shulong

AU - Dong, Jianrong

AU - Tackeuchi, Atsushi

N1 - Funding Information: The authors would like to thank Naohiro Asaka and Michiya Hashimoto of Waseda University for their experimental help. This work was supported in part by a Grant-in-Aid for Scientific Research (No. 22360032) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2012/6/18

Y1 - 2012/6/18

N2 - We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.

AB - We have investigated the exciton and carrier spin relaxations in InGaAs lattice-matched to Ge substrates. Time-resolved spin-dependent pump and probe reflectance measurements revealed a spin relaxation behavior between 10 and 300 K. The presence of the carrier density dependence of spin relaxation time at 10-200 K implies that the Bir-Aronov-Pikus process is effective. At 250-300 K, the strong temperature and weak carrier density dependences of spin relaxation time show that the D'yakonov-Perel' process is dominant. The longest observed spin relaxation time of 2.6 ns at 77 K is explained by the decrease in the spatial overlap of electrons and holes.

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JF - Applied Physics Letters

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ER -

Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates

Abstract

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