Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

S. F. Chichibu; A. Uedono; A. Tsukazaki; T. Onuma; M. Zamfirescu; A. Ohtomo; A. Kavokin; G. Cantwell; C. W. Litton; T. Sota; M. Kawasaki

doi:10.1088/0268-1242/20/4/009

Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

S. F. Chichibu^*, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Cantwell, C. W. Litton, T. Sota, M. Kawasaki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ _nr). The value of τ_nr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies V_Zn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of V_Zn.

Original language	English
Pages (from-to)	S67-S77
Journal	Semiconductor Science and Technology
Volume	20
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/20/4/009
Publication status	Published - 2005 Apr

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/20/4/009

Cite this

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title = "Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO",

abstract = "Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.",

author = "Chichibu, {S. F.} and A. Uedono and A. Tsukazaki and T. Onuma and M. Zamfirescu and A. Ohtomo and A. Kavokin and G. Cantwell and Litton, {C. W.} and T. Sota and M. Kawasaki",

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TY - JOUR

T1 - Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

AU - Chichibu, S. F.

AU - Uedono, A.

AU - Tsukazaki, A.

AU - Onuma, T.

AU - Zamfirescu, M.

AU - Ohtomo, A.

AU - Kavokin, A.

AU - Cantwell, G.

AU - Litton, C. W.

AU - Sota, T.

AU - Kawasaki, M.

PY - 2005/4

Y1 - 2005/4

N2 - Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.

AB - Static and dynamic responses of excitons in state-of-the-art bulk and epitaxial ZnO were analyzed to support the possible realization of polariton lasers. Free excitonic photoluminescence (PL) intensity at room temperature naturally increased with the increase in nonradiative lifetime (τ nr). The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in Zn vacancies VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn.

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JO - Semiconductor Science and Technology

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Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

Abstract

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