Exciton spectra of cubic and hexagonal GaN epitaxial films

Shigefusa Chichibu*, Hajime Okumura, Shuji Nakamura, Guy Feuillet, Takashi Azuhata, Takayuki Sota, Sadafumi Yoshida

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

78 Citations (Scopus)


Fundamental exciton structures in both cubic (c) and hexagonal (h) polytypes of GaN epitaxial films were compared. The photoreflectance (PR) spectra of both polytypes exhibited excitonic transitions up to room temperature (RT). The lowest exciton resonance energy of c-GaN (3.267 eV at 10 K) was confirmed to be smaller by 0.21 eV than that of h-GaN. The low-temperature photoluminescence (PL) spectra of both polytypes were dominated by excitonic emissions; h-GaN exhibited well-resolved bound and free exciton peaks and c-GaN exhibited a broadened excitonic emission, which was dominated by bound and free excitons below and above 80 K, respectively. The PL spectra at RT of h-GaN exhibited predominant, A and B free exciton emissions. The E2 phonon replicas of excitons were found in the PL spectra of h-GaN, indicating the coupling of excitons with nonpolar phonons through the deformation potential.

Original languageEnglish
Pages (from-to)1976-1983
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 SUPPL. B
Publication statusPublished - 1997 Mar


  • Cubic GaN
  • Excitons
  • Hexagonal GaN
  • Photoluminescence
  • Photoreflectance
  • Room-temperature excitons

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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