Exciton spin relaxation dynamics in InGaAs/InP quantum wells

Shunsuke Akasaka; Shogo Miyata; Takamasa Kuroda; Atsushi Tackeuchi

doi:10.1063/1.1792376

Exciton spin relaxation dynamics in InGaAs/InP quantum wells

Shunsuke Akasaka^*, Shogo Miyata, Takamasa Kuroda, Atsushi Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The exciton spin relaxation mechanism in the range 13 and 300 K in InGaAs/InP quantum wells was analyzed using time-resolved spin-dependent pump and probe absorption measurements. It was observed that exciton spin relaxation time, τ_s above 40 K depend on temperature, T, according to τ_s∝I^-1.1. The carrier density dependence of exciton spin relaxation time was also observed below 40 K. The results show that spin relaxation is governed by D'yakonov-Perel' (DP) process above 40 K and by Bir-Aronov-Pikus (BAP)process below 40 K.

Original language	English
Pages (from-to)	2083-2085
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1792376
Publication status	Published - 2004 Sept 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1792376

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@article{3791158be6cb4ffb89e20e85ffcb05ab,

title = "Exciton spin relaxation dynamics in InGaAs/InP quantum wells",

abstract = "The exciton spin relaxation mechanism in the range 13 and 300 K in InGaAs/InP quantum wells was analyzed using time-resolved spin-dependent pump and probe absorption measurements. It was observed that exciton spin relaxation time, τs above 40 K depend on temperature, T, according to τs∝I-1.1. The carrier density dependence of exciton spin relaxation time was also observed below 40 K. The results show that spin relaxation is governed by D'yakonov-Perel' (DP) process above 40 K and by Bir-Aronov-Pikus (BAP)process below 40 K.",

author = "Shunsuke Akasaka and Shogo Miyata and Takamasa Kuroda and Atsushi Tackeuchi",

note = "Funding Information: The authors appreciate the help of A. Wada in the experiment. This work was supported in part by a grant-in-aid for Scientific Research on the Priority Area “Semiconductor Nanospintronics” (No. 14076217) from the MEXT. The work was also partly supported by a Grant-in-Aid for the 21st Century COE Program (Physics of Self-organization Systems) at Waseda University from the MEXT. ",

year = "2004",

month = sep,

day = "13",

doi = "10.1063/1.1792376",

language = "English",

volume = "85",

pages = "2083--2085",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Exciton spin relaxation dynamics in InGaAs/InP quantum wells

AU - Akasaka, Shunsuke

AU - Miyata, Shogo

AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

N1 - Funding Information: The authors appreciate the help of A. Wada in the experiment. This work was supported in part by a grant-in-aid for Scientific Research on the Priority Area “Semiconductor Nanospintronics” (No. 14076217) from the MEXT. The work was also partly supported by a Grant-in-Aid for the 21st Century COE Program (Physics of Self-organization Systems) at Waseda University from the MEXT.

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The exciton spin relaxation mechanism in the range 13 and 300 K in InGaAs/InP quantum wells was analyzed using time-resolved spin-dependent pump and probe absorption measurements. It was observed that exciton spin relaxation time, τs above 40 K depend on temperature, T, according to τs∝I-1.1. The carrier density dependence of exciton spin relaxation time was also observed below 40 K. The results show that spin relaxation is governed by D'yakonov-Perel' (DP) process above 40 K and by Bir-Aronov-Pikus (BAP)process below 40 K.

AB - The exciton spin relaxation mechanism in the range 13 and 300 K in InGaAs/InP quantum wells was analyzed using time-resolved spin-dependent pump and probe absorption measurements. It was observed that exciton spin relaxation time, τs above 40 K depend on temperature, T, according to τs∝I-1.1. The carrier density dependence of exciton spin relaxation time was also observed below 40 K. The results show that spin relaxation is governed by D'yakonov-Perel' (DP) process above 40 K and by Bir-Aronov-Pikus (BAP)process below 40 K.

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VL - 85

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EP - 2085

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Exciton spin relaxation dynamics in InGaAs/InP quantum wells

Abstract

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