Exciton spin relaxation dynamics in InGaAs/InP quantum wells

Shunsuke Akasaka*, Shogo Miyata, Takamasa Kuroda, Atsushi Tackeuchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


The exciton spin relaxation mechanism in the range 13 and 300 K in InGaAs/InP quantum wells was analyzed using time-resolved spin-dependent pump and probe absorption measurements. It was observed that exciton spin relaxation time, τs above 40 K depend on temperature, T, according to τs∝I-1.1. The carrier density dependence of exciton spin relaxation time was also observed below 40 K. The results show that spin relaxation is governed by D'yakonov-Perel' (DP) process above 40 K and by Bir-Aronov-Pikus (BAP)process below 40 K.

Original languageEnglish
Pages (from-to)2083-2085
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2004 Sept 13

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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