Excitonic emissions from hexagonal GaN epitaxial layers

S. Chichibu; T. Azuhata; T. Sota; S. Nakamura

doi:10.1063/1.361110

Excitonic emissions from hexagonal GaN epitaxial layers

S. Chichibu^*, T. Azuhata, T. Sota, S. Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ_7c) band to the A (Γ_9v) and B (Γ_7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy k_BT up to room temperature, which suggests the dominance of excitons in the PL spectra

Original language	English
Pages (from-to)	2784-2786
Number of pages	3
Journal	Journal of Applied Physics
Volume	79
Issue number	5
DOIs	https://doi.org/10.1063/1.361110
Publication status	Published - 1996 Mar 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.361110

Cite this

@article{8b353e8ecd22490d903014cdfb01bbfc,

title = "Excitonic emissions from hexagonal GaN epitaxial layers",

abstract = "Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra",

author = "S. Chichibu and T. Azuhata and T. Sota and S. Nakamura",

year = "1996",

month = mar,

day = "1",

doi = "10.1063/1.361110",

language = "English",

volume = "79",

pages = "2784--2786",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - Excitonic emissions from hexagonal GaN epitaxial layers

AU - Chichibu, S.

AU - Azuhata, T.

AU - Sota, T.

AU - Nakamura, S.

PY - 1996/3/1

Y1 - 1996/3/1

N2 - Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra

AB - Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra

UR - http://www.scopus.com/inward/record.url?scp=0030109890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030109890&partnerID=8YFLogxK

U2 - 10.1063/1.361110

DO - 10.1063/1.361110

M3 - Article

AN - SCOPUS:0030109890

SN - 0021-8979

VL - 79

SP - 2784

EP - 2786

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Excitonic emissions from hexagonal GaN epitaxial layers

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this