Excitonic polariton structures in Wurtzite GaN

Kousuke Torii; Shigefusa F. Chichibu; Takahiro Deguchi; Hisayuki Nakanishi; Takayuki Sota; Shuji Nakamura

doi:10.1016/S0921-4526(01)00440-9

Excitonic polariton structures in Wurtzite GaN

Kousuke Torii, Shigefusa F. Chichibu^*, Takahiro Deguchi, Hisayuki Nakanishi, Takayuki Sota, Shuji Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.

Original language	English
Pages (from-to)	268-276
Number of pages	9
Journal	Physica B: Condensed Matter
Volume	302-303
DOIs	https://doi.org/10.1016/S0921-4526(01)00440-9
Publication status	Published - 2001
Event	Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan Duration: 2000 Sept 24 → 2000 Sept 27

Keywords

Excitonic polariton
GaN
Lateral epitaxial overgrowth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)00440-9

Cite this

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title = "Excitonic polariton structures in Wurtzite GaN",

abstract = "Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.",

keywords = "Excitonic polariton, GaN, Lateral epitaxial overgrowth",

author = "Kousuke Torii and Chichibu, {Shigefusa F.} and Takahiro Deguchi and Hisayuki Nakanishi and Takayuki Sota and Shuji Nakamura",

note = "Copyright: Copyright 2007 Elsevier B.V., All rights reserved.; Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors ; Conference date: 24-09-2000 Through 27-09-2000",

year = "2001",

doi = "10.1016/S0921-4526(01)00440-9",

language = "English",

volume = "302-303",

pages = "268--276",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Excitonic polariton structures in Wurtzite GaN

AU - Torii, Kousuke

AU - Chichibu, Shigefusa F.

AU - Deguchi, Takahiro

AU - Nakanishi, Hisayuki

AU - Sota, Takayuki

AU - Nakamura, Shuji

PY - 2001

Y1 - 2001

N2 - Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.

AB - Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.

KW - Excitonic polariton

KW - GaN

KW - Lateral epitaxial overgrowth

UR - http://www.scopus.com/inward/record.url?scp=0034972706&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034972706&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)00440-9

DO - 10.1016/S0921-4526(01)00440-9

M3 - Conference article

AN - SCOPUS:0034972706

SN - 0921-4526

VL - 302-303

SP - 268

EP - 276

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors

Y2 - 24 September 2000 through 27 September 2000

ER -

Excitonic polariton structures in Wurtzite GaN

Abstract

Keywords

ASJC Scopus subject areas

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