Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films

Junjun Jia, Aiko Takasaki, Nobuto Oka, Yuzo Shigesato*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

90 Citations (Scopus)


The shift of the Fermi level in polycrystalline aluminum doped zinc oxide (AZO) films was studied by investigating the carrier density dependence of the optical band gap and work function. The optical band gap showed a positive linear relationship with the two-thirds power of carrier density n e 2 / 3. The work function ranged from 4.56 to 4.73 eV and showed a negative linear relationship with n e 2 / 3. These two phenomena are well explained on the basis of Burstein-Moss effect by considering the nonparabolic nature of the conduction band, indicating that the shift of Fermi level exhibits a nonparabolic nature of the conduction band for the polycrystalline AZO film. The variation of work function with the carrier density reveals that the shift of the surface Fermi level can be tailored by the carrier density in the polycrystalline AZO films. The controllability between the work function and the carrier density in polycrystalline AZO films offers great potential advantages in the development of optoelectronic devices.

Original languageEnglish
Article number013718
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2012 Jul 1
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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