A procedure to extend the limit of proximity x-ray lithography (PXL) by changing the exposure methods is proposed. In particular, it is shown that PXL can be used at 25 nm and most probably 18 nm design rule by changing the exposure methods corresponding to the gap limit by steppers. The same light source and facility layout can be used throughout the full generations of PXL.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 2002 Nov
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering