Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

E. Toyota*, M. Washio, H. Watanabe, H. Sumitani

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2821-2825
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2003

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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