Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

E. Toyota; M. Washio; H. Watanabe; H. Sumitani

doi:10.1116/1.1629718

Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

E. Toyota^*, M. Washio, H. Watanabe, H. Sumitani

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2821-2825
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
DOIs	https://doi.org/10.1116/1.1629718
Publication status	Published - 2003

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1629718

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Toyota, E., Washio, M., Watanabe, H., & Sumitani, H. (2003). Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(6), 2821-2825. https://doi.org/10.1116/1.1629718

Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination). / Toyota, E.; Washio, M.; Watanabe, H. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 2003, p. 2821-2825.

Research output: Contribution to journal › Article › peer-review

Toyota, E, Washio, M, Watanabe, H & Sumitani, H 2003, 'Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 6, pp. 2821-2825. https://doi.org/10.1116/1.1629718

Toyota E, Washio M, Watanabe H, Sumitani H. Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination). Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003;21(6):2821-2825. doi: 10.1116/1.1629718

Toyota, E. ; Washio, M. ; Watanabe, H. et al. / Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination). In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 6. pp. 2821-2825.

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Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

ASJC Scopus subject areas

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