Abstract
The regrowth of p-InGaN as the extrinsic base layer of Npn-type GaN/InGaN heterojunction bipolar transistors (HBTs) significantly improves the ohmic characteristics of the base layer. The specific contact resistance is 7.8 × 10-4 Ω-cm2 even after the dry etching. This value for a non-alloyed ohmic contact is much better than that for as-grown p-GaN (1.7 × 10-3 Ω-cm2) and decreased turn-on voltage in the emitter-base diodes, which results in high current gains of up to 2000 and reduced offset voltages in the GaN/InGaN HBTs. These results show that the p-InGaN extrinsic base regrowth is an effective way to improve nitride HBT characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 1922-1924 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2004 Apr |
| Externally published | Yes |
Keywords
- Contact resistance
- Current gain
- Diode
- Extrinsic base
- HBT
- MOVPE
- Offset voltage
- Ohmic contact
- P-InGaN
- Regrowth
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)