Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

S. Kobayashi; T. Takenobu; S. Mon; A. Fujiwara; Y. Iwasa

doi:10.1063/1.1577383

Fabrication and characterization of C₆₀ thin-film transistors with high field-effect mobility

S. Kobayashi^*, T. Takenobu, S. Mon, A. Fujiwara, Y. Iwasa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

237 Citations (Scopus)

Abstract

Fabrication and characterization of C₆₀ thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm²/V was achieved in C₆₀ TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.

Original language	English
Pages (from-to)	4581-4583
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	25
DOIs	https://doi.org/10.1063/1.1577383
Publication status	Published - 2003 Jun 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Fabrication and characterization of C60 thin-film transistors with high field-effect mobility",

abstract = "Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.",

author = "S. Kobayashi and T. Takenobu and S. Mon and A. Fujiwara and Y. Iwasa",

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AU - Takenobu, T.

AU - Mon, S.

AU - Fujiwara, A.

AU - Iwasa, Y.

PY - 2003/6/23

Y1 - 2003/6/23

N2 - Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.

AB - Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.

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Fabrication and characterization of C₆₀ thin-film transistors with high field-effect mobility

Abstract

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