Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

Kenji Tomatsu; Takashi Hamada; Takashi Nagase; Saori Yamazaki; Takashi Kobayashi; Shuichi Murakami; Kimihiro Matsukawa; Hiroyoshi Naito

doi:10.1143/JJAP.47.3196

Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

Kenji Tomatsu^*, Takashi Hamada, Takashi Nagase, Saori Yamazaki, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The preparation of organic-inorganic hybrid gate dielectrics of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic field-effect transistors (OFETs) by the solution process. It is found that the electrical resistivity of a PMSQ film synthesized by a sol-gel method is significantly influenced by the synthesis conditions such as the type of organic solvent used and water content. PMSQ films prepared in toluene show a high resistivity of over 10¹⁴Ωcm even at a low thermal treatment of 150°C, which is attributed to the decrease in the silanol concentration of the PMSQ films. Top-contact OFET fabricated on a PMSQ-coated SiO₂ gate dielectric using poly(3-hexylthiophene) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO ₂ dielectrics.

Original language	English
Pages (from-to)	3196-3199
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.3196
Publication status	Published - 2008 Apr 25
Externally published	Yes

Keywords

Gate insulator
Organic field-effect transistor
Organic-inorganic hybrid dielectric
Poly(3-hexylthiophene)
Poly(methyl silsesquioxane)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{1f897f8d18d046c1984f9da369fb2b9b,

title = "Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators",

abstract = "The preparation of organic-inorganic hybrid gate dielectrics of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic field-effect transistors (OFETs) by the solution process. It is found that the electrical resistivity of a PMSQ film synthesized by a sol-gel method is significantly influenced by the synthesis conditions such as the type of organic solvent used and water content. PMSQ films prepared in toluene show a high resistivity of over 1014Ωcm even at a low thermal treatment of 150°C, which is attributed to the decrease in the silanol concentration of the PMSQ films. Top-contact OFET fabricated on a PMSQ-coated SiO2 gate dielectric using poly(3-hexylthiophene) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO 2 dielectrics.",

keywords = "Gate insulator, Organic field-effect transistor, Organic-inorganic hybrid dielectric, Poly(3-hexylthiophene), Poly(methyl silsesquioxane)",

author = "Kenji Tomatsu and Takashi Hamada and Takashi Nagase and Saori Yamazaki and Takashi Kobayashi and Shuichi Murakami and Kimihiro Matsukawa and Hiroyoshi Naito",

year = "2008",

month = apr,

day = "25",

doi = "10.1143/JJAP.47.3196",

language = "English",

volume = "47",

pages = "3196--3199",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 PART 2",

}

TY - JOUR

T1 - Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

AU - Tomatsu, Kenji

AU - Hamada, Takashi

AU - Nagase, Takashi

AU - Yamazaki, Saori

AU - Kobayashi, Takashi

AU - Murakami, Shuichi

AU - Matsukawa, Kimihiro

AU - Naito, Hiroyoshi

PY - 2008/4/25

Y1 - 2008/4/25

N2 - The preparation of organic-inorganic hybrid gate dielectrics of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic field-effect transistors (OFETs) by the solution process. It is found that the electrical resistivity of a PMSQ film synthesized by a sol-gel method is significantly influenced by the synthesis conditions such as the type of organic solvent used and water content. PMSQ films prepared in toluene show a high resistivity of over 1014Ωcm even at a low thermal treatment of 150°C, which is attributed to the decrease in the silanol concentration of the PMSQ films. Top-contact OFET fabricated on a PMSQ-coated SiO2 gate dielectric using poly(3-hexylthiophene) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO 2 dielectrics.

AB - The preparation of organic-inorganic hybrid gate dielectrics of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic field-effect transistors (OFETs) by the solution process. It is found that the electrical resistivity of a PMSQ film synthesized by a sol-gel method is significantly influenced by the synthesis conditions such as the type of organic solvent used and water content. PMSQ films prepared in toluene show a high resistivity of over 1014Ωcm even at a low thermal treatment of 150°C, which is attributed to the decrease in the silanol concentration of the PMSQ films. Top-contact OFET fabricated on a PMSQ-coated SiO2 gate dielectric using poly(3-hexylthiophene) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO 2 dielectrics.

KW - Gate insulator

KW - Organic field-effect transistor

KW - Organic-inorganic hybrid dielectric

KW - Poly(3-hexylthiophene)

KW - Poly(methyl silsesquioxane)

UR - http://www.scopus.com/inward/record.url?scp=54249136777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54249136777&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.3196

DO - 10.1143/JJAP.47.3196

M3 - Article

AN - SCOPUS:54249136777

SN - 0021-4922

VL - 47

SP - 3196

EP - 3199

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4 PART 2

ER -

Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

Abstract

Keywords

ASJC Scopus subject areas

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