Fabrication and packaging of a resonant infrared sensor integrated in silicon

C. Cabuz*, S. Shoji, K. Fukatsu, E. Cabuz, K. Minami, M. Esashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.

Original languageEnglish
Pages (from-to)92-99
Number of pages8
JournalSensors and Actuators: A. Physical
Issue number1-3
Publication statusPublished - 1994 May
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering


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