Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process

Hitoshi Umezawa; Kenich Kitatani; Kengo Kinumura; Nobuyuki Seto; Kazuo Tsugawa; Hiroshi Kawarada

Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process

Hitoshi Umezawa^*, Kenich Kitatani, Kengo Kinumura, Nobuyuki Seto, Kazuo Tsugawa, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	151-153
Number of pages	3
Journal	New Diamond and Frontier Carbon Technology
Volume	9
Issue number	2
Publication status	Published - 1999 Dec 1

Keywords

Diamond
MESFET
Self-aligned gate process

ASJC Scopus subject areas

Materials Science(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

@article{abf8d0452f1f4b3b865fa10f79e3aed0,

title = "Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process",

keywords = "Diamond, MESFET, Self-aligned gate process",

author = "Hitoshi Umezawa and Kenich Kitatani and Kengo Kinumura and Nobuyuki Seto and Kazuo Tsugawa and Hiroshi Kawarada",

year = "1999",

month = dec,

day = "1",

language = "English",

volume = "9",

pages = "151--153",

journal = "New Diamond and Frontier Carbon Technology",

issn = "1344-9931",

publisher = "M Y U Scientific Publishing Division",

number = "2",

}

TY - JOUR

T1 - Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process

AU - Umezawa, Hitoshi

AU - Kitatani, Kenich

AU - Kinumura, Kengo

AU - Seto, Nobuyuki

AU - Tsugawa, Kazuo

AU - Kawarada, Hiroshi

PY - 1999/12/1

Y1 - 1999/12/1

KW - Diamond

KW - MESFET

KW - Self-aligned gate process

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M3 - Article

AN - SCOPUS:0347020362

SN - 1344-9931

VL - 9

SP - 151

EP - 153

JO - New Diamond and Frontier Carbon Technology

JF - New Diamond and Frontier Carbon Technology

IS - 2

ER -

Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process

Keywords

ASJC Scopus subject areas

Other files and links

Cite this